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  Theory of photoinduced phase transitions: from semiclassical to quantum aspects
   Tetsuo Ogawa  Osaka University, Japan
  Topics 
    
I review recent progress of theoretical studies for the photoinduced phase 
transitions (PIPTs) to clarify what the PIPTs are. The PIPTs are classified 
into two types: (a) global phase change via optically excited states and 
(b) new phase creation in optically excited states. 
- First, concerning with (a), photoinduced structural phase transitions via 
excited electronic states are discussed theoretically using a 
one-dimensional model composed of localized electrons and lattices under 
the adiabatic or diabatic approximation. I show that the global structural 
change by photoexcitation only at a site is possible, and I clarify 
conditions for the occurrence of such phenomena. Spatiotemporal dynamics of 
nonequilibrium first-order phase transitions is also investigated in detail 
in terms of photoinduced nucleations and domino processes of the domain 
boundaries (domain walls), which are in striking contrast to the mean-field 
dynamics. 
  In the adiabatic regime, after the spontaneous emission of a photon, an 
initial local structural change (i) remains locally, (ii) induces 
cooperatively a global structural change, or (iii) disappears and returns 
to the initial phase. Dynamical features of the case (ii) are characterized 
by the deterministic domino process; domain walls between the two phases 
move deterministically at a constant velocity (with changing speed) without 
further spontaneous emissions in the case of strong (weak) dissipation. In 
the diabatic regime, similar three types of structural change exist. The 
domain-wall dynamics is described as the stochastic domino process, which 
is accompanied by the successive radiative transitions. 
  
- Second, concerning with (b), I discuss quantum states of electron-hole 
systems, which are optically excited states consisting of many electrons 
and holes in two bands. In particular, the exciton Mott transition, the 
"from-insulator-to-metal transition" of the electron-hole systems as the 
particle density increases is introduced in detail. In the one-dimensional 
case, bozonization technique and the renormalization group method are 
employed. The one-dimensional systems are found to be insulating even at 
the high density limit and that the exciton Mott transition never occurs at 
absolute zero temperature. The insulating ground state exhibits a strong 
instability towards the crystallization of biexcitons. In the case of 
higher dimensions, we analyze a two-band Hubbard model with interactions of 
electron-electron (hole-hole) repulsion U and electron-hole attraction -U'. 
With the use of the dynamical mean-field theory, the phase diagram in the 
U-U' plane is obtained (which is exact in infinite dimensions) assuming 
that electron-hole pairs do not condense. When both electron and hole bands 
are half-filled, two types of insulating states appear: the Mott-Hubbard 
insulator for U>U' and the biexciton-like insulator for U
  
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