Organized by the Institute of Experimental Physics, University of Bialystok and the Institute of Atomic Energy, Swierk under the auspices of the European Crystallographic Association; Committee of Crystallography, the Polish Academy of Sciences; and the Polish Neutron Scattering Society The School is financially supported in part by the International Union of Crystallography; the European Crystallographic Association; the European Office of Aerospace Research & Development; the Ministry of Science and Information Society Technologies; the Warsaw University of Technology; and the University of Bialystok.
		Ion implantation as a method of forming nano-structered layers Z. Werner1,2 1The Andrzej Soltan Institute for Nuclear Studies, Swierk, Poland 2Institute of Physical Chemistry, Polish Academy of Sciences, Warsaw Poland Topics The paper reviews the reasons behind an interest in studying the properties of nanostructured layers in the context of using ion implantation as a method of creating layers with high concentration of metal or semiconductor nanoclusters. Layers of metallic nanoclusters in transparent materials exhibit strong non-linear optical properties thus making them suitable candidates for photonic materials. On the other hand, semiconducting nanoclusters are studied as candidates for materials with strong luminescence coupled with a possibility of easy tuning the emitted wavelength. Peculiarities and advantages of ion implantation as a versatile and flexible method of forming such nanostructured layers are discussed. The usefulness of this method is presented on such examples as: - implanted nanoclasters of Au , Ag, and Cu in MgO and fused silica, - diamond nanoclusters in fused silica, - nanoclusters of compound semiconductors in silica, - nanocrystals with "core-shell" structure formed by co-implantation. Current problems and future prospects of using ion implantation in the domain of nanotechnology are presented.